I: Ultra-Shallow Junction Cleaning: Metrology for Evaluating Dopant Loss and Substrate Erosion
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Published:2007-11
Issue:
Volume:134
Page:129-131
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ISSN:1662-9779
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Container-title:Solid State Phenomena
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language:
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Short-container-title:SSP
Author:
Ameen Mike S.1,
Srivastava Aseem K.1,
Berry Ivan L.1
Affiliation:
1. Axcelis Technologies Inc.
Abstract
We have investigated the use of Rs and SIMS
measurements to quantify substrate erosion
due to plasma ashing and subsequent wet
cleaning in the creation of ultra-shallow
junctions. The near-surface proximity of the
implants makes them highly sensitive to
various plasma and wet chemical processes.
We also observed a dependency on the
implant species, dose and energy that can be
correlated to substrate damage incurred during
implant.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Cited by
2 articles.
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1. High Dose Implant Stripping;Handbook of Cleaning in Semiconductor Manufacturing;2011-02-22
2. Effects of resist strip and clean on USJ performance;Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08);2008-05