Improved Extraction of the Local Carrier Generation Lifetime from Forward Diode Characteristics

Author:

Pengchan W.1,Phetchakul Toempong2,Poyai Amporn3

Affiliation:

1. King Mongkut’s Institute of Technology Ladkrabang

2. King Mongkut’s Institute of Technology

3. Thai Microelectronics Center

Abstract

This paper is proposed to extract the local carrier generation lifetime from forward current-voltage (I-V) characteristics of p-n junctions in case of non-uniform defects. The different geometry p-n junctions have been fabricated by a standard CMOS technology. The forward I-V and high frequency capacitance-voltage (C-V) characteristics of p-n junctions have been measured. The recombination current density can be extracted from the area forward current density by subtracting with the area diffusion current density. Form the recombination current density, the local generation and recombination lifetime can be obtained.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Reference5 articles.

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2. Y. Tamai, M.M. Oka, A. Nakada and T. Ohmi, influence of substrate dopant concentration on electrical properties and residual defects in pn junction formed by low-temperature post-implantation annealing, J. Appl. Phys., Vol. 87(7), pp.3488-3496, (2000).

3. A. Poyai, C. Claeys and E. Simoen, Improved extraction of carrier concentration and depletion width from capacitance-voltage characteristics of silicon n+-p-well junction diodes, Appl. Phys. Lett., Vol. 80(7), pp.1192-1194, (2002).

4. W. Pengchan, T. Phetchkul and A. Poyai, Implantation-induced Defects Analysis Based on Activation Energy Diagnostics, Proceeding of the IEEE 12th International Symposium on Integrated Circuits 2009, pp.518-521, (2009).

5. S.M. Sze, Physics of Semiconductor Devices, Wiley, New York. (1981).

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