Magnetron Sputtering Yield and Relative Factors

Abstract

In this work, we mainly summarize the influence of the ion bombardment cathode (target) and relative factors of magnetron sputtering yield in production thin film. Magnetron sputter deposition permits a much wider selection of film materials, produces films with higher purity and better controlled composition, provides films with greater adhesive strength and homogeneity, and permits better control of deposit thickness. Unlike most other work described about sputtering yield, sputtering for thin-film production is performed using the plasma rather than a focused ion beam. When an ion with the energy hits a surface of the target, a small fraction of the energy and momentum of the incoming ion will, through lattice collisions, be reversed and may cause ejection of surface atoms (sputtering). The average number of the atoms ejected from the cathode surface per incident ion is called the sputtering yield. The sputtering yield varies with the target material, the kind of impinging ion, and the energy of that ion. At a given ion energy, The sputtering yield increases with increasing angle of incidence up to a maximum at an angle between 55 ° and 85 ° with respect to the surface normal [1, 3].