Affiliation:
1. Hebei University of Technology
2. Tianjin University of Technology
Abstract
In this paper, it studies a new cleaning agent for post CMP pattern wafers. The polyamine chelating agent R(NH2)n complexing agent is used in pattern post-CMP cleaning, and the inhibitor BTA can effectively protect the wafer. The surfactant should be appropriate, and the concentration should be 1.5 ‰.
Publisher
Trans Tech Publications, Ltd.
Cited by
1 articles.
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