Discussion of A<sub>Si</sub>-Si<sub>i</sub>-Defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon-Reference-Cited by-同舟云学术

Discussion of A_Si-Si_i-Defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon

Published:2015-10 Issue: Volume:242 Page:90-95
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Lauer Kevin¹,Möller Christian¹,Schulze Dirk²,Ahrens Carsten³,Vanhellemont Jan⁴

Affiliation:

1. CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH

2. TU Ilmenau

3. Infineon Technologies AG

4. Ghent University

Abstract

Further experimental support for theASi-Sii-defect as cause of light-induced degradation and as the defect responsible for a photoluminescence peak called P line in indium doped silicon is given. TheASi-Sii-defect model has two main implications related to oxygen clustering during Czochralski crystal growth and the common understanding of the boron interstitial defect. These implications are discussed and it is shown that theASi-Sii-defect model is in agreement with available experimental data related to oxygen clustering and the boron interstitial defect.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.242.90.pdf

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