Characterization of Si Convertors of Beta-Radiation in the Scanning Electron Microscope

Abstract

The approach for imitation of beta radiation using the e-beam of scanning electron microscope (SEM) for semiconductor energy converter testing is proposed. It is based on the Monte-Carlo simulation of depth-dose dependence for beta-particles and a determination of collection probability from the EBIC measurements of collection efficiency dependence on beam energy. Experiments with the 63Ni radiation source confirm that such approach allows to predict the efficiency of semiconductor structures for radiation energy conversion to electric power.