Co Anomalous Growth Kinetics of the CoSi Reaction Layer in a Si/System
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Published:2008-02
Issue:
Volume:273-276
Page:99-104
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ISSN:1662-9507
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Container-title:Defect and Diffusion Forum
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language:
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Short-container-title:DDF
Author:
Cserháti Csaba1,
Glodán Györgyi1,
Csik A.2,
Langer G.A.1,
Erdélyi Z.1,
Balogh Z.1,
Beke Dezső L.1
Affiliation:
1. University of Debrecen
2. Hungarian Academy of Sciences (ATOMKI)
Abstract
Solid state reactions between amorphous Si and crystalline Co have been investigated by
4W electrical resistance and TEM. Multilayered (with 10 periods of 5nm a-Si/5nm Co and 10 nma-
Si/10nm Co layers) as well as tri-layered samples (20nm a-Si/3nmCoSi/6nm Co) were produced by
magnetron sputtering and isothermally heat treated at different temperatures between 473 and 523K.
From the time evolution of the normalized resistance the kinetics of the process were determined by
fitting a power law, tk, and k was between 0.8 and 1. Possibility of the interface reaction control
and/or the effect of the diffusion asymmetry (which was recently published for the non-parabolic
interface shifts on the nanoscale) will be discussed.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Radiation