Stable Hydrogen Pair Trapped at Carbon Impurities in Silicon-Reference-Cited by-同舟云学术

Stable Hydrogen Pair Trapped at Carbon Impurities in Silicon

Published:2003-11 Issue: Volume:221-223 Page:1-10
ISSN:1662-9507
Container-title:Defect and Diffusion Forum
language:
Short-container-title:DDF

Author:

Markevich Vladimir P.¹,Hourahine B.,Newman R.C.²,Jones R.³,Kleverman Mats⁴,Lindström J. Lennart⁵,Murin L.I.⁶,Suezawa Masashi⁷,Öberg Sven⁸,Briddon Patrick R.⁹

Affiliation:

1. University of Manchester

2. Imperial College of Science, Technology and Medicine

3. University of Exeter

4. University of Lund

5. Lund University

6. National Academy of Science of Belarus

7. Tohoku University

8. Luleå University of Technology

9. University of Newcastle

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Radiation

Link

https://www.scientific.net/DDF.221-223.1.pdf

Reference28 articles.

1. S. Pearton, M. Stavola, and J. W. Corbett, Acta Metall. 4, 332 (1992).

2. G. Davies and R. C. Newman, in Handbook on semiconductors, edited by S. Mahajan (Elsevier, Amsterdam, 1994), Vol. 3, p.1557.

3. J. D. Holbech et al., Phys. Rev. Lett. 71, 875 (1993).

4. A. G. Gaydon, Dissociation energies and spectra of diatomic molecules, 3rd ed. (Chapman and Hall, London, 1968).

5. L. Hoffmann et al., Phys. Rev. B 61, 16659 (2000).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Isotope-Dependent Phonon Trapping at Defects in Semiconductors;Solid State Phenomena;2013-10

2. Huge isotope effect on the vibrational lifetimes of an H2*(C) defect in Si;Physical Review B;2013-03-13

3. Vibrational Absorption Associated with Hydrogen;Springer Series in Solid-State Sciences;2011-10-27