Investigation of Ti/Ni Bilayer Contacts to n-Type 4H-SiC

Abstract

The analysis of Ti/Ni metal-layer as Ohmic and Schottky contacts to 4H n-SiC (with a doping concentration of ~1E18 cm-3) is reported. Both Ti (10nm/Ni (100nm) contact and Ti (20nm)/Ni (100nm) contact were found to have Ohmic behavior with comparable specific contact resistance (~4.3 to 5.3×10-4 Ωcm2) after annealing at 1100 °C. Ti (10nm)/Ni (100nm) contact annealed at 500 °C and 600 °C was also demonstrated as Schottky contact to 4H n-SiC layers.