Characterisation of 4H-SiC MOS Capacitor with a Protective Coating for Harsh Environments Applications
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Published:2017-05
Issue:
Volume:897
Page:327-330
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Roy Sandip Kumar1,
Ibanez Jesus Urresti1,
O’Neill Anthony G.1,
Wright Nick G.1,
Horsfall Alton B.1
Abstract
Oxygen free Ohmic contacts are essential for the realisation of high performance devices. Ohmic contacts in SiC often require annealing under vacuum at over 1000 °C, whilst high-κ dielectrics are usually annealed in O2 rich ambient at temperatures of 800 °C or less, affecting the electrical and surface characteristics. Therefore, protection of the Ohmic contacts during the annealing of a high-κ dielectric layer is a key enabling step in the realisation of high performance MOS structures. In order to prevent damage during the high-k formation the use of silicon nitride as a passivation layer, capable of protecting the contacts during annealing, has been investigated. In this work we have investigated and compared silicon nitride protected high-κ dielectric SiC based MOS capacitors with the unprotected SiC MOS devices in terms of electrical and optical characteristics.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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