SiC Vertical-Channel n- and p-JFETs Fully Fabricated by Ion Implantation

Abstract

Silicon carbide (SiC) n-and p-channel junction field effect transistors (JFETs) with vertical channels were fabricated by direct ion implantation into a high-purity semi-insulating 4H-SiC substrate in order to further develop the path towards complementary JFET integrated circuits for applications in harsh environments. Compared with the conventional structure (lateral channel), the proposed structure is suitable for integration and inherently has a high transconductance owing to the double-gate configuration. The threshold voltage (Vth) can be controlled by mask design, while Vth in the conventional structure is solely determined by the ion implantation conditions. We demonstrate the transistor operation of the vertical-channel n-and p-channel JFETs fully fabricated by ion implantation.