Theoretic Study of the Structures and Electric Properties of N-Doped InSb Nanoclusters-Reference-Cited by-同舟云学术

Theoretic Study of the Structures and Electric Properties of N-Doped InSb Nanoclusters

Published:2011-06 Issue: Volume:483 Page:574-578
ISSN:1662-9795
Container-title:Key Engineering Materials
language:
Short-container-title:KEM

Author:

Ding Jian Ning¹,Yuan Ning Yi¹,Wang Xiu Qin¹,Li Chang Lin¹,Ding Gu Qiao¹

Affiliation:

1. Changzhou University

Abstract

The first-principle quantum mechanical method was used to investigate the structures and electric properties of N-doped. Doping of N atom to clusters is found to be energetically quite favorable except for n=16. Different from bulk material, the LUMO-HOMO energy gaps of the InnSbn(n=6-12,14,16,24) clusters are enlarged by doping of N. The analysis of the electron density of the HOMO and LUMO states was performed to understand the behavior .

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://www.scientific.net/KEM.483.574.pdf

Reference12 articles.

1. Shan, W.; Walukiewicz, W.; Ager III,J. W.; et al. Band Anticrossing in GaInNAs Alloys. Phys. Rev. Lett. 1999, 82, 1221-1224.

2. Tomić, S.; O'Reilly, E. P.; Klar, Peter J.; et al. Influence of conduction-band nonparabolicity on electron confinement and effective mass in GaNxAs1−x/GaAs quantum wells. Phys. Rev. B 69, 2004, 245305.

3. Tomić, S. Electronic structure of InyGa1−yAs1−xNx/GaAs(N) quantum dots by ten-band k∙p theory. Phys. Rev. B 2006, 73, 125348.

4. Ashley,T.; Burke,T. M.; Pryce,G. J.; et al. InSb1−xNx growth and devices, Solid-State Electron. 2003, 47, 387-394.

5. Veal,T. D.; Mahboob,I.; and McConville,C. F. Negative Band Gaps in Dilute InNxSb1-x Alloys. Phys. Rev. Lett. 2004, 92, 136801.

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