Abstract
Technological aspects of ion implantation in SiC device processes are described.
Annealing techniques to suppress surface roughening of implanted SiC (0001) are demonstrated. Trials to achieve a low sheet resistance are described for n-type and p-type doping. Implantation into the (11-20) face is also presented. Electrical behaviors of implants near implanted tail regions are discussed based on experiments.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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