Affiliation:
1. University of Jyväskylä
2. Kasetsart University
3. Chiang Mai University
Abstract
The lithographic exposure characteristic of amorphous silica (SiO2) was investigated for 6.8 MeV16O3+ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO2in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.
Publisher
Trans Tech Publications, Ltd.
Cited by
3 articles.
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1. Development of procedures for programmable proximity aperture lithography;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07
2. High speed microfluidic prototyping by programmable proximity aperture MeV ion beam lithography;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07
3. Lithographic fabrication of soda-lime glass based microfluidics;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07