Affiliation:
1. Shandong University at Weihai
Abstract
Boride inclusions in the synthetic diamond single crystals grown from Fe-Ni-C-B system under high temperature and high pressure were studied in the present paper. Both chemical composition and structure of the inclusions incorporated into the diamond during the process of diamond growth were successfully determined by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). It was found that the inclusions related to boron trapped in the diamond consisted of f.c.c. (FeNi)23(CB)6, (FeNi)3(CB), Fe2B, FeB, hexagonal Ni3B, and B4C.
Publisher
Trans Tech Publications, Ltd.
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