Affiliation:
1. Université de Lille 1
2. Korea Advanced Institute of Science and Technology (KAIST)
3. Universitas Indonesia
Abstract
Gallium nitride (GaN) on silicon (Si) is governed by the possibility to use this family of semiconductor for novel optoelectronic devices. GaN layers are deposited by MOCVD on silicon Si (111) using AlGaN buffer layer. We have studied the microstructure quality of the films. From SEM, TEM and AFM observations, we have observed that the films exhibit a good quality: the films are highly oriented (0001) with a smooth surface morphology (roughness of 12nm). We have completely characterized the optical properties using the prism coupling technique.
Publisher
Trans Tech Publications, Ltd.
Reference20 articles.
1. Jasprit Singh, Electronic and Optoelectronic Properties of Semiconductor Structures, 1st ed., University of Michigan, Cambridge University Press, New York., (2003).
2. Shuji Nakamura, Gerhard Fasol, The Blue Laser Diode: GaN Based Light Emitters and Lasers, Springer-Verlag, Berlin, (1997).
3. N. Ikeda , J. Li, H. Takehara, T. Wada, S. Yoshida, High-performance normally off FET using an AlGaN/GaN heterostructure on Si substrate, J. Crystal Growth 275 (2005) e1019-e1095.
4. S. Kato, Y. Satoh, H. Sasaki, I. Masayuki, S. Yoshida, C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE, J. Crystal Growth 298 (2007) 831-834.
5. C. Jin, D. Pavlidis, L. Considine, A Novel GaN-Based High Frequency Varactor Diode, Proceedings of the 5th European Microwave IC Conference, Paris, France, 27-28 September (2010).
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