Relative Analysis of GaAs, InSb, InP Using QWFET

Abstract

Indium Antimonide (InSb) has the greater electron mobility and saturation velocity of any semiconductor. Also InSb detectors are sensitive between 1–5 μm wavelengths and it belongs to III-V [13] component. In this paper we compare the InSb with some other major components like Indium Phosphide (InP) and Gallium Arsenide (GaAs) which are also from same III-V group. The analysis was made using the simulation tool TCAD and using the properties and band structure of those materials we compare InSb with InP and GaAs. The results we proposed shows that InSb is best for ultra high speed and very low power applications.