Study of the High Frequency Dielectric Properties of SrBi2 Ta2O9 Ferroelectric Thin Films-Reference-Cited by-同舟云学术

Study of the High Frequency Dielectric Properties of SrBi₂ Ta₂O₉ Ferroelectric Thin Films

Published:2006-05 Issue: Volume:514-516 Page:259-263
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Delmonte Nicola¹,Watts Bernard Enrico²,Leccabue Fabrizio³,Cova Paolo¹,Chiorboli Giovanni¹

Affiliation:

1. Università di Parma

2. CNR-IMEM Institute

3. Istituto IMEM/CNR

Abstract

In recent years several ferroelectric thin films have been studied at microwave frequencies; lead zirconate titanate (PZT) and barium-strontium titanate (BST) has been widely investigated. However, the microwave dielectric properties of strontium-bismuth tantalate (SBT) have not yet been investigated so widely [1]. The purpose of this work is the microwave characterization of the dielectric properties of an SBT thin film biased at different DC voltages. The dielectric properties of SBT make it a good material for the production of FERAM memories. Microwave characterizations may show other properties that could promote the SBT as good candidate for capacitors to be employed also in microwave circuits (e.g. resonators and filters). In this work a study of high frequency dielectric properties has been performed and equivalent circuit model has been used to correct the measurements.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.514-516.259.pdf

Reference8 articles.

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