Affiliation:
1. Aix-Marseille Université
2. University of Central Florida
Abstract
The Diffusion and Solubility of B Implanted in δ-Ni2Si and Nisi Layers Is Studied by SIMS. it Is Observed that both Diffusion and Solubility Are Higher in δ-Ni2Si than Nisi. the Redistribution of B during Ni Silicidation Is Also Studied. the SIMS Profiles Show the Presence of Concentration Step in the Middle of the Final Nisi Layer. this Profile Shape Is Explained in Light of the Results Obtained in Preformed Silicides. the Proposed Model Is Supported by Redistribution Simulations that Can Reproduce the Main Features of the Profile.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Radiation
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