Affiliation:
1. Indian Institute of Science
Abstract
In view of the importance of the silicides in the high temperature applications, the diffusion behaviour is compared in different systems for two types of silicides, XSi2and X5Si3(X=Nb, Mo, V). Atomic mechanism of diffusion and defects present in the structure are discussed. In both the phases, Si has faster diffusion rate than the metal species. This is expected from the nearest neighbour (NN) bonds present in the XSi2phase but rather unusual in the X5Si3phase. Relative mobilities of the species calculated indicate the presence of high concentration of Si antisites. Moreover, the concentration of the defects is different in different systems to find different diffusion rates.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Radiation
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