Research of Soldering Silicon Substrate with Solder Type Sn-Ag-Ti

Author:

Koleňák Roman1,Prach Michal1

Affiliation:

1. Slovak University of Technology in Bratislava

Abstract

The work deals with soldering of silicon substrate with active solders designated S-Bond 220-1, 220-50 and 220-M. Soldering was performed with power ultrasound in the air without flux application at temperature 250 to 280 °C. The results of EDX analysis have shown that active elements as Ti, Ce and Mg support wetting of Si substrate and thus assure the joint formation. Strength of joints was studied by shear test. The highest strength was achieved with S-Bond 220-1 solder. The strength of joints fabricated with S-bond solders on Si substrate varied from 23 to 38 MPa.

Publisher

Trans Tech Publications, Ltd.

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