Affiliation:
1. SCREEN Semiconductor Solutions Co., Ltd.
Abstract
VPC (Vapor Phase Cleaning) is studied to etch various types oxide film using a mixture of HF gas and H2O vapor. We focused on controlling the amount of gas molecules adsorbed on the oxide surface and investigated the H2O amount included in oxide films, which will contribute to the oxide etching reaction. We have verified that selective etching between different oxide films can be achieved by controlling the gas adhesion amount by varying process parameters and utilizing the different amounts of H2O in the oxide films for several deposition methods.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
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1 articles.
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