Abstract
In this study, measurable thickness range was improved by re-customized components of the thickness measurement system using the method of Fabry-Perot interference signature analyzing. A Fourier transform near infrared (FT-NIR) spectrometer with indium gallium arsenide was used in the developed system. As a result of the sensitiveness in the whole near infrared band and high spectral resolution united with high signal noise ratio of the FT-NIR spectrometer, the maximum measurable thickness is improved to 88μm while sub-micron order of the minimum measurable thickness is also improved.
Publisher
Trans Tech Publications, Ltd.
Reference5 articles.
1. Teppei Onuki, Naoto Takagi, Jun Shimizu, Hirotaka Ojima and Libo Zhou, Spectroscopic measurements of silicon wafer thickness for backgrinding process, Advanced Material Research 325 (2011) pp.672-677.
2. Teppei ONUKI, Ryusuke ONO, Takahiro OJIMA, Jun SHIMIZU and Libo ZHOU, Thin silicon wafer thickness meter by means of near infrared spectroscopy, Journal of the Japan society for Abrasive Technology 55 (2011) pp.729-732 (in Jaapanese).
3. Teppei ONUKI, Ryusuke ONO, Akira SUZUKI, Takahiro OJIMA, Jun SHIMIZU and Libo ZHOU, Influence of material properties in thickness measurements of ultra-thin monocrystalline wafers by optical reflection spectroscopic method, will be submitted to Sensors.
4. Teppei ONUKI, Ryusuke ONO, Shusuke YANAGIMACHI, Takahiro OJIMA, Jun SHIMIZU and Libo ZHOU, Applications of optical reflection spectroscopic measurement schemes for manufacturing inspections of electronic devices, will be submitted to Optics and Lasers in Engineering.
5. Edward D. Palik, Handbook of optical constants of solids III, Academic Press, (1998) pp.155-185.
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献