Electrical and Physical Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films under Oxygen Plasma Treatment for Nonvolatile Memory Devices Application-Reference-Cited by-同舟云学术

Electrical and Physical Characteristics of Ba(Zr_0.1Ti_0.9)O₃ Thin Films under Oxygen Plasma Treatment for Nonvolatile Memory Devices Application

Published:2008-02 Issue: Volume:368-372 Page:75-77
ISSN:1662-9795
Container-title:Key Engineering Materials
language:
Short-container-title:KEM

Author:

Chen Kai Huang¹,Chen Ying Chung¹,Chia Wei Kuo²,Chen Zhi Sheng¹,Yang Cheng Fu³,Chung Ho Hua⁴

Affiliation:

1. National Sun Yat-Sen University

2. Fortune Institute of Technology

3. National University of Kaohsiung

4. Kao Yuan University

Abstract

In this study, the effects of oxygen gas plasma on the surface treatment of Ba(Zr0.1Ti0.9)O3 (BZT) films are investigated. The influence of plasma on the structure is developed by using X-ray diffraction patterns and the electrical characteristics are developed by using the MIM and MFIS capacitor structure. Experiment results clearly indicate that the electrical characteristics of BZT film have improved effectively within oxygen plasma surface treatment.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://www.scientific.net/KEM.368-372.75.pdf

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