Affiliation:
1. Taras Shevchenko Kiev University
Abstract
Aluminum nanoislands deposited on silicon substrate were studied by a scanning tunnelling microscopy technique. Measurements completed with spatial resolution up to 1 nm revealed a complex nanoisland structure-rhomboidally ordered near the border of the aluminum-silicon and porous structure in the islands upper parts. Volt-ampere curves demonstrated strong dependency from the film thickness and were interpreted as nanoscale effects. Kelvin probe microscopy was used for simultaneous aluminum-alumina and alumina-air surface scanning.
Publisher
Trans Tech Publications, Ltd.