Mechanism of Formation and Physical Classification of the Grown-In Microdefects in Semiconductor Silicon
Author:
Affiliation:
1. Institute of State & Municipal Government
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Radiation
Link
https://www.scientific.net/DDF.230-232.177.pdf
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Diffusion model of the formation of growth microdefects: A new approach to defect formation in crystals (Review);Physics of the Solid State;2016-03
2. On the problem of the consistency of the high-temperature precipitation model with the classical nucleation theory;Physics of the Solid State;2014-10
3. Analysis and calculation of the formation of grown-in microdefects in dislocation-free silicon single crystals;Crystallography Reports;2012-11-15
4. A kinetic model of the formation and growth of interstitial dislocation loops in dislocation free silicon single crystals;Journal of Crystal Growth;2012-05
5. Modeling of defect formation processes in dislocation-free silicon single crystals;Crystallography Reports;2010-07
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