Author:
Sampayan S.E.,Bora Mihail,Brooksby Craig,Caporaso G.J.,Conway Adam,Hawkins Steve,Hickman Brad,Holmes Cliff,Nguyen Hoang,Nikolic Rebecca,Palmer Dave,Voss Lars,Wang Lisa,Waters Amy
Abstract
High gain photoconductive switching using Si and GaAs was studied previously for pulsed high voltage switching. A laser is used to generate charge carriers within the material to render the bulk conductive. We have begun the study of photoconductive switching using wide bandgap materials. These materials appear to operate in a non-high gain mode and the on resistance can be directly controlled with the laser intensity over many decades. It is presently believed that the conduction mechanism may be due to (a) excitation of deep states or (b) multi-photon pumping of carriers from the valance band. We present the study of the physics processes and development of a device operating at >20-kV.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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