Surface Texture Analysis of Fixed and Free Abrasive Machining of Silicon Substrates for Solar Cells

Author:

Chen Chao Chang Arthur1,Chao Pei Hsiun1

Affiliation:

1. National Taiwan University of Science and Technology

Abstract

Multi-wire sawing process has been widely used for wafer slicing of silicon substrates for solar cells. Usually there are two different kinds of wire saw in multi-wire sawing process including free abrasive wire sawing with SiC grits and fixed abrasive wire sawing with diamond wire. For free abrasive wire sawing process, the material removal mechanism can be considered as lapping and the fixed abrasive wire sawing can be considered as grinding. This paper is to investigate the characteristics of the surface texture of silicon substrate fabricated by these two wire sawing process. Experimental results have been observed by white light interferometry and SEM. Some different properties of both processes have compared been with variant characteristics including 2-D and 3-D surface roughness parameters. Results of this paper can be further used to evaluate the feasibility of wire sawing process of silicon substrates for solar cells.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Reference5 articles.

1. T. Enomoto, Y. Shimazakil, Y. Tani ,M. Suzukis and Y. Kanda: Development of a Resinoid Diamond Wire Containing Metal Powder for Slicing a Silicon Ingot, Annals of the CIRP, Volume. 48, no. 1, pp.273-276(1999).

2. J. Hans Möller, Adv. Engineering Materials, no. 7, 501-513 (2004).

3. J-S. Liang: Study on Wire Sawing of Solar Wafers, MS thesis, Dept. ME, National Taiwan University of Science and Technology (2008).

4. C-C. A. Chen, B-L. Kuo, and J-S. Liang: Chip Size Estimation for Effective Blending Ratio of Slurries in Wire Sawing of Silicon Wafers for Solar Cells, Advanced Materials Research, vol. 76-78, 422-427 (2009).

5. D. Kray, M. Schumann: Solar Wafer Slicing with Loose and Fixed grains, IEEE, pp.948-951 (2006). Surface roughness Free abrasive Fixed abrasive Ra(ISO4287, µm) 0. 338 0. 22 Sa(ISO25178, µm) 0. 714 0. 318.

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