A High Performance CCM PFC Circuit Using a SiC Schottky Diode and a Si SuperFETTM Switch
-
Published:2008-09
Issue:
Volume:600-603
Page:1235-1238
-
ISSN:1662-9752
-
Container-title:Materials Science Forum
-
language:
-
Short-container-title:MSF
Author:
Choi Won Suk1,
Young Sung Mo1,
Woodin Richard L.2,
Witt A.W.2,
Shovlin J.2
Affiliation:
1. Fairchild Korea Semiconductor
2. Fairchild Semiconductor
Abstract
SuperFETTM MOSFETs and silicon carbide (SiC) Schottky diodes are applied to
continuous conduction mode active power factor correction pre-regulators. SuperFETTM MOSFETs
can reduce power losses dramatically with their extremely low RDS(ON) and fast switching. The SiC
Schottky diode has virtually zero reverse recovery current and high thermal conductivity, and is close
to an ideal diode for a CCM PFC circuit. Due to these outstanding switching characteristics,
frequency can be increased. In this paper, the SiC Schottky diode’s and SuperFETTM MOSFET’s
performance have been verified in a CCM PFC boost converter. These products can reduce the total
power losses and enhance the system efficiency.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献