Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process
-
Published:2008-09
Issue:
Volume:600-603
Page:959-962
-
ISSN:1662-9752
-
Container-title:Materials Science Forum
-
language:
-
Short-container-title:MSF
Author:
Kang In Ho1,
Song Jae Yeol2,
Joo Sung Jae1,
Bahng Wook1,
Kim Sang Cheol1,
Kim Nam Kyun1
Affiliation:
1. Korea Electrotechnology Research Institute (KERI)
2. Dongeui University
Abstract
The effect of the doping concentration and space of both p-grid and FLR on the electrical
performances of 4H-SiC JBS diode has been investigated. A 4H-SiC JBS diode with the p-grid space
of 3um, the FLR space of 3um, and the doping concentration of 5E18cm-3 showed the highest
blocking voltage of 1500V.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献