Affiliation:
1. Universiti Sains Malaysia
2. Nanyang Technological University
Abstract
Physical and electrical properties of sol-gel derived SiO2 thick film (100-130 nm)
deposited on n-type 4H-SiC have been investigated. The oxide was annealed in argon gas ambient
for 30 minutes at 650, 750, 850, and 950°C, in order to optimize the oxide properties. Results
indicated that the oxide is denser with a significant reduction in percentage of porosity as the
annealing temperature increases, except for sample annealed at 950°C. The oxide annealed at
850°C was having values of refractive index and dielectric constant close to the values reported in
thermally grown SiO2 and it has demonstrated the lowest leakage current density and total interface
trap density. Viscous shear flow effect has been proposed as the main contributor for the reduction
of physical properties when the oxide was annealed at 950°C.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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