Affiliation:
1. Kunming University of Science and Technology
2. University of Tokyo
Abstract
The structural defects including dislocations and grain boundaries (GBs) in upgraded metallurgical grade silicon (UMG-Si) prepared by vacuum directional solidification were investigated. The results demonstrated that higher withdrawal rates increased the dislocation density. The state of melt growth changed from quasi-equilibrium to non-equilibrium, and the GB type was also highly related to the withdrawal rate, especially for ∑3 boundary. The change of total interfacial energy and increase of carbon concentration may be a possible driving mechanism for this phenomenon.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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