Abstract
Simple, physics-based, and accurate circuit models are reported for GaN power HEMTs and inductors; these models are then used to design high-performance chip-scale synchronous buck (SB) power converters to provide agile point-of-load (POL) low-voltage ( down to 1V) high-current (up to 10A) power to portable mobile devices from a battery. Excellent agreement between the measured and simulated results is demonstrated for load regulation for a 19V/1.2V, 800 kHz SB converter; for comparison, the same converter performance using the best commercially available state-of-the-art silicon power MOSFETs is also evaluated. It is shown that the conventional approach used for estimating power loss of a SB power converter is in error; a new application-specific Figure of Merit (FOM) for power switches is proposed that accounts for both input and output switching losses.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. N. Thapar et al, MOSFET Technology Advances DC-DC Converter Efficiency for Processor Power, IRF Application Note, (2001).
2. K. Shenai, A circuit simulation model for high-frequency power MOSFETs, IEEE Trans. Power Electronics, vol. 6, no. 3, pp.539-547, July (1991).
3. J. Strydom, Shrink System Size with a 19 V – 1. 2 V Buck ConverterUsing eGaNTM FETs, EPC Application Note (private communication).
4. Q. Zhao and Goran Stojcic Characterization of Cdv/dt Induced Power Loss in Synchronous Buck DC-DC Converters, , APEC (2004).
5. R. Sodhi et al, Integrated Design Environment for DC/DC Converter FET Optimization", Proc. International Symposium on Power Semiconductor Devices and IC, s, pp.241-244, May (1999).