4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C-Reference-Cited by-同舟云学术

4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C

Published:2014-02 Issue: Volume:778-780 Page:607-610
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Naik Harsh¹,Chow T. Paul¹

Affiliation:

1. Rensselaer Polytechnic Institute

Abstract

This paper compares the performance of 4H-SiC MOS capacitors and MOSFETs made using the conventional NO annealing process and a high-temperature (1400°C) dry oxidation process. Through extensive C-V, G-ω, I-V and Hall measurements, the limitations of both the processes are discussed.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.778-780.607.pdf

Reference8 articles.

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