Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide

Abstract

Temperature dependence of the femtosecond laser modified region on silicon carbide was measured. The current-voltage characteristics showed the ohmic properties and thus we could evaluate the specific resistance for each irradiation conditions and the measured temperatures. The specific resistance was increased with decreasing temperature. From the double exponential fit to the temperature dependence of the specific resistance, the trapping energy of the impurity levels formed by the femtosecond laser modification was found to be 4.5 meV and 51.4 meV.