Investigation of Die Attach for SiC Power Device for 300°C Applications

Author:

Drevin-Bazin A.1,Badawi F.1,Lacroix F.2,Barbot J.F.1

Affiliation:

1. Institut Pprime CNRS - Université de Poitiers - ENSMA - UPR 3346

2. HCM Society

Abstract

The mechanical properties of die attach system SiC/Au-Ge/Au-Ni-Cu-Si3N4 using the eutectic Au-Ge solder (Teut = 356°C) were investigated in a temperature range up to 300°C. The as-resulting structure of the solder is observed to be lamellar with pockets of high concentration of Au close to the interfaces. The shear strength of joint decreases with temperature but, even at 300°C, its value is well higher than the IEC standard. The creep behavior of Au-Ge solder alloy was also investigated at 300°C for different strain levels. The creep curves show a high creep resistance even for high stress level.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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