Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport-Reference-Cited by-同舟云学术

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Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport

Published:2002-04 Issue: Volume:389-393 Page:35-38
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Wang Shao Ping¹,Sanchez Edward M.²,Kopec A.²,Poplawski S.³,Ware R.³,Holmes S.N.,Balkas Cengiz M.⁴,Timmerman A.G.³

Affiliation:

1. Beihang University

2. Dow Corning Corporation

3. Sterling Semiconductor Inc.

4. Sterling Semiconductor, Inc

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.389-393.35.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nondestructive three-dimensional observation of defects in semi-insulating 6H-SiC single-crystal wafers using a scanning laser microscope (SLM) and infrared light-scattering tomography (IR-LST);Journal of Crystal Growth;2009-07

2. Defect Distribution in N-Doped and Semi-Insulating 6H-SiC Bulk Single Crystal Wafers Observed by Two- and Three-Dimensional Light Scattering Tomography;Japanese Journal of Applied Physics;2008-07-11

3. Transient numerical study of temperature gradients during sublimation growth of SiC: Dependence on apparatus design;Journal of Crystal Growth;2006-12

4. Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality;Materials Science Forum;2004-06

5. Continuous Feed Physical Vapor Transport;Journal of The Electrochemical Society;2003

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