N<sub>2</sub>O Processing Improves the 4H-SiC:SiO<sub>2</sub> Interface-Reference-Cited by-同舟云学术

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N₂O Processing Improves the 4H-SiC:SiO₂ Interface

Published:2002-04 Issue: Volume:389-393 Page:985-988
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Lipkin Lori A.¹,Das Mrinal K.²,Palmour John W.¹

Affiliation:

1. Cree, Incorporation

2. Cree Incorporation

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.389-393.985.pdf

Cited by 179 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review of silicon carbide CMOS technology for harsh environments;Materials Science in Semiconductor Processing;2024-08

2. Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO₂ gate dielectric with H₂O plasma;Japanese Journal of Applied Physics;2024-06-03

3. High Hall electron mobility in the inversion layer of 4H-SiC (0001)/SiO₂ interfaces annealed in POCl₃;Applied Physics Express;2023-07-01

4. Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate;Nanomaterials;2023-05-06

5. Gate-oxide interface performance improvement technology of 4H-SiC MOSFET;Chinese Science Bulletin;2023-02-07

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