Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors-Reference-Cited by-同舟云学术

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Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors

Published:2002-04 Issue: Volume:389-393 Page:1337-1340
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Danielsson Erik¹,Zetterling Carl Mikael²,Östling Mikael²,Forsberg Urban³,Janzén Erik³

Affiliation:

1. KTH, Royal Institute of Technology

2. KTH Royal Institute of Technology

3. Linköping University

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.389-393.1337.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer;Materials Science Forum;2005-05

2. Electrical Characteristics of 4H-SiC BJTs at Elevated Temperatures;Materials Science Forum;2005-05

3. Extrinsic Base Design of SiC Bipolar Transistors;Materials Science Forum;2004-06

4. A high current gain 4H-SiC NPN power bipolar junction transistor;IEEE Electron Device Letters;2003-05

5. Measurements and simulations of self-heating and switching with 4H-SiC power BJTs;ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.

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