Boron Diffusion in Pre-Amorphised Silicon: Interactions with the End of Range Defects

Author:

Mathiot D.1,Claverie A.2,Martinez A.3

Affiliation:

1. INES/CNRS

2. CEMES

3. KTH, Royal Institute of Technology

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Radiation

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Mismatch and Noise;Silicon Analog Components;2019-08-08

2. Mismatch and Noise;Silicon Analog Components;2015

3. Diffusion profiles of high dosage Cr and V ions implanted into silicon;Journal of Applied Physics;2004-07-15

4. Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01

5. Analog Devices and Passive Components;Silicon Devices and Process Integration

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