Affiliation:
1. National Kaohsiung Normal University
2. National Taiwan Ocean University
Abstract
In this article, a novel InGaP/GaAs pnp δ-doped heterojunction bipolar transistor is first
demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively
large, the addition of a δ-doped sheet between two spacer layers at the emitter-base junction
effectively eliminates the potential spike and increases the confined barrier for electrons,
simultaneously. Experimentally, a high current gain of 25 and an offset voltage of 100 mV are
achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The
proposed device could be used for linear amplifiers and low-power complementary integrated
circuit applications.
Publisher
Trans Tech Publications, Ltd.