A CMOS MEMS Resonant Magnetic Field Sensor with Differential Electrostatic Actuation and Capacitive Sensing

Abstract

This paper is about CMOS MEMS resonant magnetic field sensor in which differential electrostatic actuation, capacitive sensing, resonant frequency, quality factor and sensitivity of interdigitated comb resonator is investigated. Information is embedded in the output signal frequency because it is robust against the interference from other sources during transmission. At damping ratio of 0.0001, resonant frequency of the comb resonator is 4.35 kHz with quality factor 5000 and amplitude 18.45 μm. Sensitivity of the device towards external magnetic field is 9.455 mHz/nT which is 10,000 times improved than recently published data.