PZT Thin Films from Bulk PZT for Vibration Power Harvester Applications

Abstract

The objective of this work was the development of a technology for the fabrication of piezoelectric PZT thin films from bulk PZT on silicon wafer for micro power harvester applications. With the lapping technique, the thickness of bulk PZT was reduced from 300µm to 10µm at the top data. KOH etching for silicon was used to thin the thickness of silicon cantilever from 300µm to 15µm at the top data. The piezoelectric coefficient d31 was measured to be -12pC/N. Resonance frequency measurements on a 4mmX1mmX0.06mm cantilever resulted in a value of 430Hz, and the voltage output was around 0.68V at 1g acceleration. The result shows that the fabrication process is quite feasible.