1. [1] J. Lee: “RF power detector design with temperature compensation for power amplifiers bias control,” IEICE Electron. Express 6 (2009) 418 (DOI: 10.1587/elex.6.418).
2. [2] C. Li, et al.: “A 34-dB dynamic range 0.7-mW compact switched-capacitor power detector in 65-nm CMOS,” IEEE Trans. Power Electron. 34 (2019) 9365 (DOI: 10.1109/TPEL.2019.2908283).
3. [3] A. Serhan, et al.: “A 700MHz output bandwidth, 30dB dynamic range, common-base mm-wave power detector,” IEEE IMS Dig. Tech. Papers (2015) 1 (DOI: 10.1109/MWSYM.2015.7166764).
4. [4] T. Zhang, et al.: “A novel 5GHz RF power detector,” IEEE ISCAS Dig. Tech. Papers (2004) 897 (DOI: 10.1109/ISCAS.2004.1328340).
5. [5] V. Milanovic, et al.: “CMOS foundry implementation of Schottky diodes for RF detection,” IEEE Trans. Electron Devices 43 (1996) 2210 (DOI: 10.1109/16.544393).