An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply-Reference-Cited by-同舟云学术

An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply

Published:2021-03-25 Issue:6 Volume:18 Page:20210059-20210059
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Nagao Junichiro¹,Chatterjee Urmimala²,Li Xiangdong²,Furuta Jun¹,Decoutere Stefaan²,Kobayashi Kazutoshi¹

Affiliation:

1. Graduate School of Science and Technology, Kyoto Institute of Technology

2. Interuniversity Microelectronics Centre

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/18/6/18_18.20210059/_pdf

Reference32 articles.

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3. [3] J. Millán, et al.: “A survey of wide bandgap power semiconductor devices,” IEEE Trans. Power Electron. 29 (2014) 2155 (DOI: 10.1109/TPEL.2013.2268900).

4. [4] E.A. Jones, et al.: “Characterization of an enhancement-mode 650-V GaN HFET,” 2015 IEEE Energy Conversion Congress and Exposition (ECCE) (2015) 400 (DOI: 10.1109/ECCE.2015.7309716).

5. [5] G. Mauromicale, et al.: “Efficiency of state-of-the-art GaN devices in a synchronous-rectifier buck converter,” IECON 2019-45th Annual Conference of the IEEE Industrial Electronics Society 1 (2019) 1726 (DOI: 10.1109/IECON.2019.8927488).

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