Design of a low-insertion-phase-shift MMIC attenuator integrated with a serial-to-parallel converter-Reference-Cited by-同舟云学术

Design of a low-insertion-phase-shift MMIC attenuator integrated with a serial-to-parallel converter

Published:2017 Issue:20 Volume:14 Page:20170924-20170924
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Wang Kangrui¹,Wang Zhiyu¹,Wang Gang¹,Chen Hua¹,Zheng Qin¹,Yu Faxin¹

Affiliation:

1. School of Aeronautics and Astronautics, Zhejiang University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/14/20/14_14.20170924/_pdf

Reference13 articles.

1. [1] I. L. Abdalla, et al.: “A DC-2.5 GHz voltage variable attenuator in 0.18-µm CMOS technology,” 2014 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS) (2014) 352 (DOI: 10.1109/APCCAS.2014.7032792).

2. [2] H. Doganet al.: “Analysis and design of RF CMOS attenuators,” IEEE J. Solid-State Circuits 43 (2008) 2269 (DOI: 10.1109/JSSC.2008.2004325).

3. [3] B.-H. Ku and S. Hong: “6-bit CMOS digital attenuators with low phase variations for X-band phased-array systems,” IEEE Trans. Microw. Theory Techn. 58 (2010) 1651 (DOI: 10.1109/TMTT.2010.2049691).

4. [4] J. Iannacciet al.: “RF-MEMS technology for 5G: Series and shunt attenuator modules demonstrated up to 110 GHz,” IEEE Electron Device Lett. 37 (2016) 1336 (DOI: 10.1109/LED.2016.2604426).

5. [5] X. Nanet al.: “Design and realisation of radio-frequency attenuators based on microelectromechanical system switches,” IET Micro Nano Lett. 11 (2016) 702 (DOI: 10.1049/mnl.2016.0191).

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