A radiation harden enhanced Quatro (RHEQ) SRAM cell-Reference-Cited by-同舟云学术

A radiation harden enhanced Quatro (RHEQ) SRAM cell

Published:2017 Issue:18 Volume:14 Page:20170784-20170784
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Peng Chunyu¹,Chen Ziyang¹,Zhang Jingbo¹²,Xiao Songsong¹,Liu Changyong¹,Wu Xiulong¹,Lin Zhiting¹

Affiliation:

1. School of Electronics and Information Engineering, Anhui University

2. Industry Development and Promotion Center, Ministry of Industry and Information Technology of the Peoples Republic China

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/14/18/14_14.20170784/_pdf

Reference16 articles.

1. [1] E. Ibeet al.: “Impact of scaling on neutron-induced soft error in SRAMs from a 250 nm to a 22 nm design rule,” IEEE Trans. Electron Devices 57 (2010) 1527 (DOI: 10.1109/TED.2010.2047907).

2. [2] P. E. Dodd and L. W. Massengill: “Basic mechanisms and modeling of single-event upset in digital microelectronics,” IEEE Trans. Nucl. Sci. 50 (2003) 583 (DOI: 10.1109/TNS.2003.813129).

3. [3] C. Qiet al.: “A highly reliable memory cell design combined with layout-level approach to tolerant single-event upsets,” IEEE Trans. Device Mater. Rel. 16 (2016) 388 (DOI: 10.1109/TDMR.2016.2593590).

4. [4] S. M. Jahinuzzamanet al.: “A soft error tolerant 10T SRAM bit-cell with differential read capability,” IEEE Trans. Nucl. Sci. 56 (2009) 3768 (DOI: 10.1109/TNS.2009.2032090).

5. [5] T. Calinet al.: “Upset hardened memory design for submicron CMOS technology,” IEEE Trans. Nucl. Sci. 43 (1996) 2874 (DOI: 10.1109/23.556880).

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multiple-Error Interceptive Voter Designs for Safety-Critical Applications;2024 IEEE International Test Conference in Asia (ITC-Asia);2024-08-18

2. Novel radiation-hardened-by-design (RHBD) 14T memory cell for aerospace applications in 65 nm CMOS technology;Microelectronics Journal;2023-11

3. Design of a Highly Reliable Low Power Stacked Inverter-Based SRAM Cell with Advanced Self-recoverability from Soft Errors;Advances in Cognitive Science and Communications;2023

4. Quadruple and Sextuple Cross-Coupled SRAM Cell Designs With Optimized Overhead for Reliable Applications;IEEE Transactions on Device and Materials Reliability;2022-06

5. Nwise and Pwise: 10T Radiation Hardened SRAM Cells for Space Applications With High Reliability Requirements;IEEE Access;2022