A high-sensitive digital photosensor using MOS interface-trap charge pumping-Reference-Cited by-同舟云学术

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A high-sensitive digital photosensor using MOS interface-trap charge pumping

Published:2004 Issue:18 Volume:1 Page:556-561
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Uehara Akihiro¹,Kagawa Keiichiro¹,Tokuda Takashi¹,Ohta Jun¹,Nunoshita Masahiro¹

Affiliation:

1. Graduate School of Materials Science, Nara Institute of Science and Technology

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/elex/1/18/1_18_556/_pdf

Reference8 articles.

1. Proposal of Application of Pulsed Vision Chip for Retinal Prosthesis

2. Back-illuminated pulse-frequency-modulated photosensor using silicon-on-sapphire technology developed for use as epi-retinal prosthesis device

3. Pixel design of pulsed CMOS image sensor for retinal prosthesis with digital photosensitivity control

4. An active microphotodiode array of oscillating pixels for retinal stimulation

5. Charge pumping in MOS devices

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