SiC JFET dc characteristics under extremely high ambient temperatures-Reference-Cited by-同舟云学术

SiC JFET dc characteristics under extremely high ambient temperatures

Published:2004 Issue:17 Volume:1 Page:523-527
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Funaki Tsuyoshi¹,Balda Juan C.²,Junghans Jeremy²,Kashyap Avinash S.²,Barlow Fred D.²,Mantooth H. Alan²,Kimoto Tsunenobu³,Hikihara Takashi¹

Affiliation:

1. Kyoto University, Dept. of Electrical Eng.

2. University of Arkansas, Dept. of Electrical Eng.

3. Kyoto University, Dept. of Electronic Science and Eng. Graduate school of Engineering

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/elex/1/17/1_17_523/_pdf

Reference6 articles.

1. An assessment of wide bandgap semiconductors for power devices

2. [2] M. Lades, “Modeling and Simulation of Wide Bandgap Semiconductor Devices: 4H/6H-SiC, ”Select. Topics Electron. Micromech., vol. 3, Shaker Verlag, Aachen, 2002.

3. SiC power diodes provide breakthrough performance for a wide range of applications

4. Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories

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