Monitoring method of solder layer void damage of IGBT module based on transfer function
Author:
Affiliation:
1. School of Electrical Engineering and Automation, Tianjin University of Technology
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Link
https://www.jstage.jst.go.jp/article/elex/21/12/21_21.20240243/_pdf
Reference30 articles.
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3. [3] K. Wang, et al.: “Monitoring bond wires fatigue of multichip IGBT module using time duration of the gate charge,” IEEE Trans. Power Electron. 36 (2021) 888 (DOI: 10.1109/TPEL.2020.3005183)
4. [4] N. Iwamuro and T. Laska: “IGBT history, state-of-the-art, and future prospects,” IEEE Trans. Electron Devices 64 (2017) 741 (DOI: 10.1109/TED.2017.2654599).
5. [5] B. Ji, et al.: “In situ diagnostics and prognostics of wire bonding faults in IGBT modules for electric vehicle drives,” IEEE Trans. Power Electron. 28 (2013) 5568 (DOI: 10.1109/TPEL.2013.2251358).
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